s m d ty p e s m d ty p e m o s f e t 1 w w w . k e x i n . c o m . c n dual n-channel m osfet ki9926 a features r ds(on) = 0. 030 @ v gs = 4.5 v r ds(on) = 0.040 @ v gs = 2. 5 v. absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit dra in-sour ce v oltage v ds 20 v gate-sour ce v oltage v gs 12 v con tinuous drain cur rent *1 t a =25 4.8 a t a =70 3.8 a pulsed drain cur rent i dm 30 a ma x im um pow er dissipation *1 t a = 25 1.25 w t a = 70 0.8 w thermal resis tance,j unction-to-am bient r ja 100 /w ma x im um j unction-to-foot (dr ain) r jf 40 /w jum ct ion tem pera ture and storage tem pera ture t j . t stg -55 to +150 *1 surfac e mo unted on 1? x 1? fr4 board. p d i d s 1 d 1 g 1 d 1 s 2 d 2 g 2 d 2 5 6 7 8 t o p v iew 2 3 4 1 g 1 d 1 s 1 g 2 d 2 s 2 1 sop -8 0.21 +0.04 -0.02 1.50 0.15
s m d ty p e 2 s m d ty p e w w w . k e x i n . c o m . c n m o s f e t el ectrical characteris tics t a = 2 5 paramet er sym bol test c onditions min typ ma x unit dra in-sour ce b reakdow n voltage v dss v gs = 0 v , i d = 250 a 20 v v ds = 20v , v gs = 0v 1 v ds = 20v , v gs = 0v , t j =55 25 gate threshold voltage v gs(th) v ds = v gs , i d = 250ua 0.6 v gate-body leakage i gss v ds = 0v , v gs = 12v 100 na v gs = 4.5v , i d = 6.5a 0.023 0.030 v gs = 2.5v , i d = 5.4a 0.030 0.040 on-state drain cu rre nt *2 i d(on) v ds = 5v , v gs = 4.5v 20 a forw ard tra nsconductance *2 g fs v ds = 15v , i d =6a 22 s total gate charge q g 13 20 gate-sour ce charge q gs 3 gate-d rain ch arge q gd 3.3 turn- on delay tim e t d(on ) 22 35 rise tim e t r 40 60 turn- off delay tim e t d(of f) 50 75 fall tim e t f 20 30 con tinuous source curre nt (diode co nduction) i s 1 a diode forw ard voltage *2 v sd i s = 1.7a, v gs = 0 v 0.7 1.2 v *2 puls e test ; puls e w idth 300 s, duty cycle 2 % . zero gate voltage dra in curr ent i dss ua dra in-sour ce on-state resist ance *2 r ds(on) v dd = 15 v, r l = 15 i d =1 a, v gen = 4.5v, r g = 6 v ds = 15v , v gs = 4.5v , i d = 6a ns nc ki9 92 6a 2
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